| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD5NM50T4 is an N-Channel Power MOSFET from the MDmesh™ family, utilizing advanced technology for high performance in power conversion applications. This device offers a 500V drain-source breakdown voltage and a continuous drain current capability of 7.5A at 25°C case temperature.
Key electrical characteristics include a maximum static drain-source on-resistance of 0.8Ω at 2.5A and 10V Vgs, and a typical on-resistance of 0.7Ω. The gate charge (Qg) is a maximum of 13nC at 10V, and the input capacitance (Ciss) is 415pF at 25V.
Designed for surface mounting, the STD5NM50T4 comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 100W at 25°C case temperature. The MOSFET also boasts high dv/dt and avalanche capabilities, making it suitable for increasing power density and efficiency in high voltage converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 500V.
The maximum continuous drain current is 7.5A at case temperature 25°C.
The operating junction temperature range is -55°C to 150°C.
The package is TO-252-3, DPAK (2 leads + tab), SC-63, surface mount.
The maximum on-resistance is 0.8Ω at VGS=10V and ID=2.5A.
The maximum gate charge is 13nC at VGS=10V.
The maximum power dissipation is 100W at case temperature 25°C.