STD5NM50AG The STMicroelectronics STD5NM50AG is an N-channel Power MOSFET designed for switching applications. It offers a 500V drain-source voltage and a continuous drain current of 7.5A.
Mfr Part #:

STD5NM50AG

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD5NM50AG is an N-channel Power MOSFET designed for switching applications. It offers a 500V drain-source voltage and a continuous drain current of 7.5A.
✓ Total Stock: 26,020 pcs
$ Price Range: $2.56

STD5NM50AG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,500 pcs
22500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

STD5NM50AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD5NM50AG Description

Short technical summary and product information.

This N-channel Power MOSFET from STMicroelectronics, part number STD5NM50AG, is developed using MDmesh™ technology. It features a 500V drain-source voltage (Vds) and a continuous drain current of 7.5A at 25°C case temperature, with a maximum power dissipation of 100W.

 

The device boasts an extremely low on-resistance of 0.8 Ohms maximum at 2.5A and 10V gate-source voltage, along with high dv/dt and excellent avalanche characteristics. It is 100% avalanche tested and AEC-Q101 qualified, making it suitable for demanding applications.

 

Packaged in a TO-252 (D-Pak) surface-mount package, the STD5NM50AG is designed for efficient thermal performance with a junction-to-case thermal resistance of 1.25 °C/W. Its operating temperature range is -55°C to 150°C (TJ).

 

Key electrical characteristics include a gate threshold voltage between 3V and 5V, input capacitance of 415pF, and a gate charge of 13nC. The low input capacitance and gate charge, combined with low gate input resistance, contribute to its superior dynamic performance.

STD5NM50AG Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: STD5NM50AG N-Channel Power MOSFET
Subcategory: N-Channel

STD5NM50AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD5NM50AG Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD5NM50AG Features

  • Automotive-grade N-channel Power MOSFET.
  • 500V drain-source voltage rating.
  • 7.5A continuous drain current.
  • Low 0.8 Ohm on-resistance.
  • DPAK surface-mount package.

STD5NM50AG Applications

  • Suitable for switching applications.
  • Designed for high-frequency power supplies.
  • Used in automotive electronics.
  • Ideal for power management circuits.

STD5NM50AG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

500 V.

What package is this MOSFET available in?

TO-252-3 (DPak) surface mount package.

What is the gate threshold voltage?

3 to 5 V (typical 4 V) at VDS = VGS, ID = 250 µA.

What is the static drain-source on-resistance?

Maximum 0.8 Ω at VGS = 10 V, ID = 2.5 A.

What is the maximum power dissipation?

100 W at TC = 25 °C.

What is the single pulse avalanche energy rating?

300 mJ at starting Tj = 25 °C, ID = IAR, VDD = 50 V.

What is the storage temperature range?

-55 to 150 °C.

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