| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,700 pcs
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12700 pcs | On Request | 1 | On Request | On Request | 737 | On Request | On Request |
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The STMicroelectronics STD5NM50-1 is an N-CHANNEL Power MOSFET designed for power switching applications. It offers a breakdown voltage of 500V and a drain-source resistance of 800mΩ at a gate-source voltage of 10V. The MOSFET has a typical input capacitance of 415pF and features fast switching times with a rise time of 8ns and a fall time of 6ns.
With a maximum power dissipation of 50W and a general power dissipation of 100W, the STD5NM50-1 operates within a temperature range of -55°C to 150°C. It is encapsulated in a TO-251 package, suitable for through-hole mounting.
This component is manufactured by STMicroelectronics and is part of their N-CHANNEL Power MOSFET series. Its specifications make it suitable for various power management and switching circuits where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the STD5NM50-1 is 500V.
The drain-source resistance is 800mΩ at a gate-source voltage of 10V.
The STD5NM50-1 is supplied in a TO-251 package.
The operating temperature range is from -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.