| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | 40 | On Request | On Request | |
|
295 pcs
|
295 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STD5NE10T4 is a high-performance N-Channel MOSFET suitable for various switching applications. This device features a maximum breakdown voltage of 100V and a continuous drain current rating of 5A. The drain-source on-resistance is specified at a maximum of 0.4 Ohms, ensuring efficient power transfer.
Constructed with Metal-Oxide Semiconductor (MOS) technology, the STD5NE10T4 operates in enhancement mode. It is designed for surface mounting within a TO-252AA package, featuring gull-wing terminals with matte tin finish. The operating temperature range extends up to 175°C, making it suitable for demanding environments. The MOSFET also includes a built-in diode and is avalanche rated.
This component is ideal for power management circuits, motor control, and other applications requiring reliable switching performance. Its robust construction and electrical characteristics make it a versatile choice for designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the STD5NE10T4 is 100V.
The maximum continuous drain current for the STD5NE10T4 is 5A.
The maximum drain-source on-resistance for the STD5NE10T4 is 0.4 Ohms.
The STD5NE10T4 can operate at temperatures up to 175°C.
The STD5NE10T4 is supplied in a TO-252AA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STD5NE10T4 is 1 Unlimited.