| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,452 pcs
|
9452 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD5N80K5 is an N-Channel MOSFET with a drain-to-source breakdown voltage (Vdss) of 800V and a continuous drain current (Id) of 4A at 25°C. This device is built using MOSFET (Metal Oxide) technology and offers a maximum on-resistance (Rds On) of 1.75 Ohms at 2A and 10V gate-source voltage.
Key electrical characteristics include an input capacitance (Ciss) of 177 pF at 100V, a gate charge (Qg) of 5 nC at 10V, and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The maximum gate-source voltage (Vgs) is ±30V, and the drive voltage is 10V. The maximum power dissipation is rated at 60W.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The RoHS status is RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The STD5N80K5 is available in a TO-252-3 (DPak) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The drain-source voltage rating is 800V.
The continuous drain current is 4A at 25°C.
The maximum on-resistance is 1.75 Ohm at 2A and 10V gate drive.
The maximum gate threshold voltage is 5V at 100µA drain current.
The maximum gate charge is 5 nC at 10V gate-source voltage.