STD5N80K5 The STMicroelectronics STD5N80K5 is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-to-source voltage and a continuous drain current of 4A.
Mfr Part #:

STD5N80K5

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD5N80K5 is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-to-source voltage and a continuous drain current of 4A.
✓ Total Stock: 11,952 pcs
$ Price Range: $2.56

STD5N80K5 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,452 pcs
9452 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD5N80K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD5N80K5 Description

Short technical summary and product information.

The STMicroelectronics STD5N80K5 is an N-Channel MOSFET with a drain-to-source breakdown voltage (Vdss) of 800V and a continuous drain current (Id) of 4A at 25°C. This device is built using MOSFET (Metal Oxide) technology and offers a maximum on-resistance (Rds On) of 1.75 Ohms at 2A and 10V gate-source voltage.

 

Key electrical characteristics include an input capacitance (Ciss) of 177 pF at 100V, a gate charge (Qg) of 5 nC at 10V, and a gate threshold voltage (Vgs(th)) of 5V at 100µA. The maximum gate-source voltage (Vgs) is ±30V, and the drive voltage is 10V. The maximum power dissipation is rated at 60W.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The RoHS status is RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.

STD5N80K5 Quick Information

Product Type: MOSFET
Series: MDmesh™
Canonical Name: STD5N80K5 N-Channel MOSFET
Subcategory: Single

STD5N80K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD5N80K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD5N80K5 Features

  • 800V drain-to-source breakdown voltage.
  • 4A continuous drain current capability.
  • Low 1.75 Ohm on-resistance.
  • Surface mount TO-252 DPAK package.
  • RoHS3 Compliant environmental status.

STD5N80K5 Applications

  • Suitable for high voltage switching.
  • Used in power supply circuits.
  • Ideal for general purpose MOSFET applications.
  • Designed for surface mount integration.

STD5N80K5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the STD5N80K5?

The STD5N80K5 is available in a TO-252-3 (DPak) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the drain-source voltage rating?

The drain-source voltage rating is 800V.

What is the continuous drain current rating?

The continuous drain current is 4A at 25°C.

What is the maximum on-resistance?

The maximum on-resistance is 1.75 Ohm at 2A and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at 100µA drain current.

What is the gate charge?

The maximum gate charge is 5 nC at 10V gate-source voltage.

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