| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD5N60M2 is an N-channel power MOSFET manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current of 3.5A at case temperature (Tc). The device has a maximum on-resistance of 1.4 Ohm at a drain current of 1.7A and gate-source voltage of 10V.
With a maximum gate charge of 8.5 nC at Vgs = 10V and input capacitance of 211 pF at Vds = 100V, this MOSFET is suitable for high-voltage switching applications where efficient gate drive and low capacitances are desired. The maximum power dissipation is 45W at Tc.
The operating junction temperature can reach up to 150°C. The device is housed in a DPAK (TO-252) surface-mount package, suitable for automated assembly and compact power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The maximum continuous drain current is 3.5A at case temperature (Tc).
The maximum on-resistance (Rds on) is 1.4 Ohm at a drain current of 1.7A and gate-source voltage of 10V.
The maximum gate charge (Qg) is 8.5 nC at Vgs = 10V.
The maximum operating junction temperature is 150°C.