STD5N60DM2 The STMicroelectronics STD5N60DM2 is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 3.5A. It comes in a surface-mount TO-252-3 DPAK package.
Mfr Part #:

STD5N60DM2

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD5N60DM2 is an N-Channel MOSFET designed for 600V operation with a continuous drain current of 3.5A. It comes in a surface-mount TO-252-3 DPAK package.
✓ Total Stock: 5,000 pcs
$ Price Range: $2.56

STD5N60DM2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request

STD5N60DM2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD5N60DM2 Description

Short technical summary and product information.

The STD5N60DM2 from STMicroelectronics is a high-performance N-Channel MOSFET. It is engineered for applications requiring a 600V drain-to-source voltage (Vdss) and can handle a continuous drain current of 3.5A at the case temperature.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and is suitable for surface mounting, featuring the TO-252-3, DPak (2 Leads + Tab), SC-63 package. Key electrical characteristics include a maximum gate charge of 8.6 nC at 10V and a maximum on-resistance (Rds On) of 1.55 Ohms at 1.75A and 10V gate drive voltage. The operating temperature range is from -55°C to 150°C (TJ).

 

With a maximum power dissipation of 45W (Tc) and a maximum gate-source voltage (Vgs) of ±30V, the STD5N60DM2 is a versatile component for power management circuits. Its input capacitance (Ciss) is rated at 375 pF at 100V Vds, and the gate threshold voltage (Vgs(th)) is 5V at 250µA Id.

 

The component is specified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected. These compliance details, however, are based on available data and may require verification.

STD5N60DM2 Quick Information

Product Type: MOSFET
Canonical Name: STD5N60DM2 N-Channel MOSFET
Subcategory: N-Channel

STD5N60DM2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD5N60DM2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD5N60DM2 Features

  • 600V drain-to-source voltage rating.
  • 3.5A continuous drain current.
  • Surface mount TO-252-3 DPAK package.
  • Low on-resistance at specified conditions.
  • Wide operating temperature range.

STD5N60DM2 Applications

  • Suitable for power switching applications.
  • Used in DC-DC converters.
  • Ideal for power supply circuits.
  • Applicable in motor control systems.

STD5N60DM2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STD5N60DM2?

600V

What is the continuous drain current rating?

3.5A at case temperature

What is the maximum on-resistance at 10V gate drive?

1.55 Ohms at 1.75A drain current

What package type does the STD5N60DM2 use?

TO-252-3, also known as DPAK or SC-63

What is the maximum gate-source voltage?

±30V

What is the operating junction temperature range?

-55°C to 150°C

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