STD5N20LT4 The STD5N20LT4 is an N-Channel MOSFET from STMicroelectronics designed for 200V applications. It features a 5A continuous drain current and a 700mOhm maximum on-resistance.
Mfr Part #:

STD5N20LT4

Available from 5 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STD5N20LT4 is an N-Channel MOSFET from STMicroelectronics designed for 200V applications. It features a 5A continuous drain current and a 700mOhm maximum on-resistance.
Total Stock: 271,990 pcs

STD5N20LT4 Available from 5 distributors

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STD5N20LT4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Id) @ Tc
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Gate Threshold Voltage (Vgs(th)) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
On-Resistance (Rds On) (Max) @ Id, Vgs
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD5N20LT4 Description

Short technical summary and product information.

The STD5N20LT4 is an N-Channel MOSFET manufactured by STMicroelectronics. This component is designed for applications requiring a drain-to-source voltage (Vdss) of up to 200V and a continuous drain current (Id) of 5A.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 700mOhm at 2.5A and 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 50µA, with a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is 242pF at 25V, and gate charge (Qg) is 6nC at 5V.

 

This MOSFET has a maximum power dissipation of 33W and an operating temperature range of -55°C to 150°C (TJ). It is constructed using MOSFET technology.

 

The STD5N20LT4 is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

STD5N20LT4 Quick Information

Product Type: MOSFET
Series: STripFET
Canonical Name: STD5N20LT4 N-Channel MOSFET
Subcategory: Single

STD5N20LT4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

STD5N20LT4 Features

  • N-Channel MOSFET technology.
  • 200V drain-to-source voltage.
  • 5A continuous drain current.
  • 700mOhm max Rds On.
  • Surface mount DPAK package.

STD5N20LT4 Applications

  • Power switching applications.
  • General purpose power control.
  • Automotive power management.

STD5N20LT4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STD5N20LT4?

The maximum drain-to-source voltage (Vdss) is 200V.

What is the maximum continuous drain current for the STD5N20LT4?

The maximum continuous drain current (Id) is 5A.

What is the maximum on-resistance (Rds On) for the STD5N20LT4?

The maximum on-resistance (Rds On) is 700mOhm at 2.5A drain current and 5V gate-source voltage.

What is the gate threshold voltage (Vgs(th)) for the STD5N20LT4?

The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 50µA.

What is the package type for the STD5N20LT4?

The STD5N20LT4 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature range of the STD5N20LT4?

The operating temperature range is -55°C to 150°C (TJ).

What is the maximum power dissipation for the STD5N20LT4?

The maximum power dissipation is 33W.

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