| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 545 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD55NH2LLT4 is a single N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 24V and can handle a continuous current of 40A at the case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 11mOhm maximum at 20A and 10V Vgs, and a gate charge (Qg) of 11nC maximum at 4.5V Vgs. The input capacitance (Ciss) is 990pF maximum at 25V Vds. The gate threshold voltage (Vgs(th)) is 1V maximum at 250µA, with a maximum gate-source voltage (Vgs) of ±16V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is designed for surface mounting.
With a power dissipation of 60W (Tc), the STD55NH2LLT4 is suitable for various power management and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
24V
-55°C to 175°C (junction temperature)
TO-252-3 (DPAK) surface mount package
40A at case temperature (Tc)
11mOhm maximum at 20A drain current and 10V gate-source voltage
11nC at 4.5V gate-source voltage
990pF at 25V drain-source voltage