| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 627 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge | |
| Input Capacitance | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The STD55NH2LL-1 from STMicroelectronics is an N-Channel MOSFET designed for power switching applications. It features a breakdown voltage of 24V and can handle a continuous drain current of up to 40A. The on-state resistance (Rds On) is a maximum of 12 mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer.
This MOSFET has a typical gate charge of 55nC and an input capacitance of 1300pF. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 1mA. It is packaged in a TO-252-3, DPak surface mount package, making it suitable for compact designs.
Key electrical characteristics include a typical Vgs(th) of 2V and a maximum drain-source leakage current (Idss) of 1mA at 24V. The component is suitable for various power management and switching applications where a robust N-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Vds) for the STD55NH2LL-1 is 24V.
The continuous drain current (Id) for the STD55NH2LL-1 is 40A.
The maximum Rds On for the STD55NH2LL-1 is 12 mOhm when measured at 20A drain current and 10V gate-source voltage.
The maximum gate threshold voltage (Vgs(th)) for the STD55NH2LL-1 is 2V at a drain current of 1mA.
The STD55NH2LL-1 is supplied in a TO-252-3, DPak (2 Leads + Tab) package.
The STD55NH2LL-1 is a surface mount device.