STD5406NT4G-VF01 The ON Semiconductor STD5406NT4G-VF01 is an N-Channel Power MOSFET designed for high current applications. It features a 40V drain-to-source voltage and a low on-resistance.
Mfr Part #:

STD5406NT4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor STD5406NT4G-VF01 is an N-Channel Power MOSFET designed for high current applications. It features a 40V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 5,000 pcs
$ Price Range: $2.56

STD5406NT4G-VF01 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 1808+ On Request On Request

STD5406NT4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD5406NT4G-VF01 Description

Short technical summary and product information.

The ON Semiconductor STD5406NT4G-VF01 is a single N-Channel Power MOSFET housed in a DPAK package. This device is rated for a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of up to 70A at a case temperature of 25°C. Its low on-resistance is specified at a maximum of 10mOhm at 30A and 10V gate-to-source voltage.

 

With a maximum power dissipation of 100W (Tc=25°C), this MOSFET is suitable for applications requiring high current capability. It operates within a temperature range of -55°C to 175°C (TJ). The surface-mount DPAK package offers efficient thermal performance, with a junction-to-case thermal resistance of 1.5°C/W.

 

Key electrical characteristics include a gate charge (Qg) of 45nC at 10V and an input capacitance (Ciss) of 2500pF at 32V. The gate-to-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is a maximum of 3.5V at 250µA.

 

This MOSFET is designed for applications such as electronic brake systems, electronic power steering, and bridge circuits. It is Pb-free and RoHS compliant.

STD5406NT4G-VF01 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: On Semiconductor STD5406NT4G-VF01 N-Channel Power MOSFET
Subcategory: N-Channel

STD5406NT4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD5406NT4G-VF01 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD5406NT4G-VF01 Features

  • 40V drain-to-source voltage rating.
  • 70A continuous drain current capability.
  • Low 10mOhm maximum on-resistance.
  • Surface mount DPAK package.
  • Suitable for automotive applications.

STD5406NT4G-VF01 Applications

  • Power management in DC-DC converters.
  • High-current load switching applications.
  • Motor control and power supply circuits.
  • Automotive and industrial power systems.

STD5406NT4G-VF01 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

40V.

What is the maximum continuous drain current?

70A at case temperature 25°C.

What is the on-resistance?

10mOhm maximum at 30A and 10V gate drive.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is this MOSFET available in?

DPAK (TO-252-3, DPak, SC-63) surface-mount package.

What is the gate threshold voltage?

3.5V maximum at 250µA.

What is the power dissipation?

100W at case temperature 25°C.

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