| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD52P3LLH6 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 52A at case temperature.
This MOSFET offers a low on-resistance (Rds On) of 12mOhm at 26A and 10V Vgs, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA, and the maximum gate-to-source voltage is ±20V. Input capacitance (Ciss) is 3350pF at 25V, and gate charge (Qg) is 33nC at 4.5V Vgs.
With a maximum power dissipation of 70W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the STD52P3LLH6 is suitable for demanding environments. It utilizes Metal Oxide Semiconductor (MOSFET) technology.
The device is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it ideal for space-constrained designs. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
52A at case temperature.
12 milliohms at 26A drain current and 10V gate voltage.
2.5V maximum at 250µA drain current.
DPAK (TO-252, DPak, SC-63) surface mount.
175°C.
4.5V and 10V.