| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | 1134 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD4NK80Z-1 is an N-channel MOSFET designed for switching applications. It features a high drain-source voltage rating of 800V and a continuous drain current capability of 3A at 25°C case temperature. The Rds On is specified at a maximum of 3.5 Ohms under specific gate-source and drain current conditions.
This MOSFET utilizes Metal Oxide technology and is packaged in a TO-251 (IPAK) package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate threshold voltage of 4.5V and a maximum gate-source voltage of ±30V. The input capacitance is 575 pF at 25V, and the gate charge is 22.5 nC at 10V.
The device has a total power dissipation of 80W at 25°C case temperature. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 800 V.
The continuous drain current is 3 A at 25°C case temperature.
The maximum on-resistance is 3.5 Ohms at 1.5A drain current and 10V gate voltage.
The gate threshold voltage is 4.5V maximum at 50µA drain current.
The operating junction temperature range is -55°C to 150°C.
The package is TO-251 (IPAK) for through-hole mounting.
The total gate charge is 22.5 nC at 10V gate voltage.