| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,056 pcs
|
2056 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD4NK60Z-1 is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 600V and a continuous drain current of 4A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 2 Ohms at 2A and 10V Vgs, an input capacitance (Ciss) of 510 pF at 25V, and a gate charge (Qg) of 26 nC at 10V Vgs. The gate-to-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 4.5V at 50µA.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It is housed in a TO-251-3 Short Leads, IPak, TO-251AA package and is designed for through-hole mounting.
The STD4NK60Z-1 is suitable for various power switching and control applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600 V.
The operating junction temperature range is -55°C to 150°C.
It uses the TO-251-3 (IPak) through-hole package with short leads.
The maximum continuous drain current is 4 A (at Tc).
The maximum on-resistance is 2 Ohm at Id = 2 A and Vgs = 10 V.
The maximum total gate charge is 26 nC at Vgs = 10 V.
The maximum input capacitance is 510 pF at Vds = 25 V.