| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
361 pcs
|
361 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD4NK50ZT4 is an N-Channel MOSFET designed for various electronic applications. It offers a high Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 3A at 25°C.
Key electrical characteristics include a maximum On-Resistance (Rds On) of 2.7 Ohms at 1.5A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4.5V at 50µA. The device has a maximum gate-source voltage (Vgs) of ±30V and an input capacitance (Ciss) of 310 pF at 25V.
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 45W (Tc).
The STD4NK50ZT4 is part of the SuperMESH™ series. It is specified as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected, though these compliance statuses are not verified by third-party documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
Surface-mount DPAK (TO-252-3, DPak, SC-63).
-55°C to 150°C (junction).
3A at 25°C case temperature.
2.7 Ohm maximum at 1.5A, 10V gate drive.
4.5V maximum at 50µA drain current.
12 nC at 10V gate-source voltage.