STD4NK50Z-1 The STD4NK50Z-1 is an N-Channel power MOSFET designed for general switching applications. It offers a 500V drain-source voltage rating and 3A continuous current capability in a compact TO-251-3 IPAK package.
Mfr Part #:

STD4NK50Z-1

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STD4NK50Z-1 is an N-Channel power MOSFET designed for general switching applications. It offers a 500V drain-source voltage rating and 3A continuous current capability in a compact TO-251-3 IPAK package.
✓ Total Stock: 4,614 pcs
$ Price Range: $2.56

STD4NK50Z-1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,614 pcs
4614 pcs On Request 1 On Request On Request 09+ On Request On Request

STD4NK50Z-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD4NK50Z-1 Description

Short technical summary and product information.

The STD4NK50Z-1 is an N-Channel enhancement mode power MOSFET manufactured by STMicroelectronics. Designed for robust performance in switching circuits, this component provides a maximum drain-to-source voltage of 500V and supports a continuous drain current of 3A at case temperature of 25°C. The device features a typical gate threshold voltage of 4.5V at 50µA, ensuring reliable turn-on characteristics for logic-level or standard drive interfaces.

 

Electrical performance includes a maximum on-resistance of 2.7Ω at 1.5A and 10V gate drive, with a total gate charge of 12nC at 10V. Input capacitance measures 310pF at 25V drain-source bias. The transistor operates across a wide junction temperature range from -55°C to 150°C and can dissipate up to 45W of power under optimal thermal conditions at the case.

 

Housed in a TO-251-3 Short Leads, also known as IPak or TO-251AA, surface-mount compatible through-hole package, the STD4NK50Z-1 facilitates efficient PCB layout for power management designs. Its metal oxide semiconductor technology delivers stable switching behavior suitable for motor control, power supply regulation, and industrial load switching applications.

STD4NK50Z-1 Quick Information

Product Type: Power MOSFET
Canonical Name: STD4NK50Z-1
Subcategory: Power MOSFET

STD4NK50Z-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD4NK50Z-1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD4NK50Z-1 Features

  • Rated for 500V drain-source voltage operation.
  • Supports 3A continuous current at 25°C case temperature.
  • Features 2.7Ω maximum on-resistance at 10V gate drive.
  • Operates reliably across -55°C to 150°C junction temperature.
  • Compact TO-251-3 IPak through-hole mounting package.

STD4NK50Z-1 Applications

  • Ideal for motor control and driver circuit designs.
  • Used in DC-DC converter switching stages.
  • Suitable for industrial load switching applications.
  • Effective in power supply regulation modules.

STD4NK50Z-1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the STD4NK50Z-1?

The maximum drain-to-source voltage (Vdss) for the STD4NK50Z-1 is 500V.

What package type does the STD4NK50Z-1 use?

The STD4NK50Z-1 is supplied in a TO-251-3 Short Leads, IPak, or TO-251AA package with through-hole mounting.

What is the operating temperature range for this component?

The operating junction temperature range for this component spans from -55°C to 150°C.

What is the maximum continuous drain current rating?

The maximum continuous drain current is 3A when measured at a case temperature of 25°C.

What is the gate threshold voltage specification?

The gate threshold voltage is specified at 4.5V maximum when tested with a drain current of 50µA.

How much power dissipation can the device handle?

The maximum power dissipation rating is 45W under case temperature conditions of 25°C.

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