STD4NK100Z The STMicroelectronics STD4NK100Z is an N-Channel MOSFET designed for power applications. It offers a high breakdown voltage and moderate current handling capabilities.
Mfr Part #:

STD4NK100Z

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD4NK100Z is an N-Channel MOSFET designed for power applications. It offers a high breakdown voltage and moderate current handling capabilities.
✓ Total Stock: 252,770 pcs
$ Price Range: $2.56

STD4NK100Z Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
123,520 pcs
123520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
122,500 pcs
122500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,750 pcs
6750 pcs On Request 1 On Request On Request On Request On Request On Request

STD4NK100Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD4NK100Z Description

Short technical summary and product information.

The STMicroelectronics STD4NK100Z is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for applications requiring a high drain-to-source voltage (Vdss) of up to 1000V and a continuous drain current of 2.2A.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 6.8 Ohms at 1.1A and 10V gate-source voltage, and a gate charge (Qg) of 18 nC at 10V. The gate threshold voltage (Vgs(th)) is 4.5V at 50µA, with a maximum gate-source voltage (Vgs) of ±30V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 90W (Tc). It is packaged in a Surface Mount DPAK (TO-252-3, SC-63) format, suitable for various electronic designs.

 

The STD4NK100Z is RoHS3 compliant and has an MSL rating of 1.

STD4NK100Z Quick Information

Product Type: MOSFET
Canonical Name: STD4NK100Z N-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

STD4NK100Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD4NK100Z Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD4NK100Z Features

  • 1000V drain-to-source breakdown voltage.
  • 2.2A continuous drain current.
  • 6.8 Ohm maximum on-resistance.
  • Surface mount DPAK package.
  • RoHS3 compliant.

STD4NK100Z Applications

  • Suitable for high voltage applications.
  • Used in power supply circuits.
  • Ideal for switching applications.
  • General purpose power switching.

STD4NK100Z FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STD4NK100Z?

The maximum drain-to-source voltage (Vdss) is 1000V.

What is the continuous drain current rating of the STD4NK100Z?

The maximum continuous drain current is 2.2A at case temperature (Tc).

What is the on-resistance of the STD4NK100Z?

The maximum on-resistance (Rds On) is 6.8 Ohms at a gate-source voltage of 10V and drain current of 1.1A.

What is the operating temperature range of the STD4NK100Z?

The operating junction temperature range is -55°C to 150°C.

What package type is the STD4NK100Z available in?

The STD4NK100Z is available in a TO-252-3 (DPak) surface mount package.

What is the maximum power dissipation of the STD4NK100Z?

The maximum power dissipation is 90W at case temperature (Tc).

What is the gate threshold voltage of the STD4NK100Z?

The maximum gate threshold voltage (Vgs(th)) is 4.5V at a drain current of 50µA.

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