| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD4N80K5 is a high-voltage N-Channel MOSFET. It is designed for power applications requiring a breakdown voltage of 800V and a continuous drain current of 3A.
Key electrical characteristics include a maximum on-resistance of 2.5 Ohms at 1.5A and 10V gate drive. The input capacitance is rated at 175 pF, and the gate charge is 10.5 nC.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.
The STD4N80K5 utilizes MOSFET (Metal Oxide) technology, offering efficient switching performance for various power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the STD4N80K5 is 800 V.
The STD4N80K5 has a continuous drain current rating of 3A.
The operating temperature range for the STD4N80K5 is -55°C to 150°C.
The STD4N80K5 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The STD4N80K5 is a surface mount device.
The RoHS status of the STD4N80K5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STD4N80K5 is 1 Unlimited.