| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,534 pcs
|
15534 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD4N62K3 is a single N-Channel MOSFET with a maximum drain-source voltage of 620V. It is designed for surface mount applications and comes in a DPAK package.
Key electrical characteristics include a maximum on-resistance of 1.95 Ohms at 1.9A and 10V Vgs, a gate charge of 14nC at 10V Vgs, and an input capacitance of 450pF at 50V Vds. The device operates at temperatures up to 150°C (TJ) and can dissipate up to 70W (Tc).
This MOSFET is suitable for various power electronics designs requiring high voltage capability and efficient switching. Its surface mount DPAK package facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 620V.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package DPAK.
The maximum operating junction temperature is 150°C.
The maximum gate charge is 14nC at Vgs = 10V.
The maximum input capacitance is 450pF at Vds = 50V.
The maximum on-resistance is 1.95 Ohm at Id = 1.9A and Vgs = 10V.
The maximum gate threshold voltage is 4.5V at Id = 50µA.