| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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17,528 pcs
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17528 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD45P4LLF6AG is a P-channel Power MOSFET utilizing STripFET™ F6 technology with a trench gate structure. This device is designed for automotive applications and is AEC-Q101 qualified.
Key electrical characteristics include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -50A at 25°C case temperature. The on-resistance (Rds(on)) is typically 12mΩ and a maximum of 15mΩ at 25A and 10V gate-source voltage. It also features a low gate charge and high avalanche ruggedness.
The MOSFET is housed in a DPAK (TO-252) surface-mount package. It operates within a temperature range of -55°C to 150°C (TJ).
This component is suitable for various switching applications where high performance and reliability are required, particularly in automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
The device is available in a surface mount DPAK (TO-252) package, also referred to as TO-252-3, DPak (2 Leads + Tab), SC-63.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 15mOhm at a drain current of 25A and gate-source voltage of 10V.
The maximum gate charge (Qg) is 65.5 nC at a gate-source voltage of 10V.
The device is rated for a single pulse avalanche energy of 160 mJ at a starting junction temperature of 25°C, with RG = 47Ω and ID(min) = -25A.
The maximum input capacitance (Ciss) is 3525 pF at a drain-source voltage of 25V.