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STD45N10F7 The STD45N10F7 is an N-Channel MOSFET from STMicroelectronics. It features a 100V drain-source voltage, 45A continuous drain current, and low on-resistance of 18mΩ.
Mfr Part #:

STD45N10F7

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STD45N10F7 is an N-Channel MOSFET from STMicroelectronics. It features a 100V drain-source voltage, 45A continuous drain current, and low on-resistance of 18mΩ.
✓ Total Stock: 18,520 pcs
$ Price Range: $2.56

STD45N10F7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,520 pcs
On Request
8520 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
7,500 pcs
On Request
7500 pcs On Request 1 On Request On Request 21+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STD45N10F7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STD45N10F7 Description

Short technical summary and product information.

The STD45N10F7 is an N-Channel MOSFET manufactured by STMicroelectronics using metal-oxide technology. It is designed for high-efficiency power management applications.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 45A at case temperature, and a maximum on-resistance of 18mΩ at 22.5A drain current with a 10V gate-source drive. The gate threshold voltage is 4.5V at 250µA, and the maximum gate charge is 25nC at 10V, enabling fast switching. Input capacitance is 1640pF at 50V, and maximum power dissipation is 60W.

 

The device is housed in a DPAK (TO-252) surface-mount package, which offers good thermal performance for its size. Typical applications include DC-DC converters, power supply switching circuits, and motor control. The N-Channel enhancement mode ensures easy drive logic integration.

STD45N10F7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: STMicroelectronics STD45N10F7 N-Channel MOSFET, 100V, 45A, DPAK
Subcategory: Single MOSFET

STD45N10F7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD45N10F7 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD45N10F7 Features

  • N-Channel MOSFET in DPAK package.
  • 100V maximum drain-source voltage.
  • 45A continuous drain current capability.
  • 18mOhm maximum on-resistance at 10V.
  • 60W power dissipation at case temperature.

STD45N10F7 Applications

  • Used in power supply switching circuits.
  • Suitable for motor control applications.
  • Ideal for DC-DC converters.
  • Great for load switching.

STD45N10F7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the STD45N10F7?

100 V.

What is the package type of the STD45N10F7?

DPAK (TO-252) surface mount package.

What is the continuous drain current rating?

45 A at case temperature Tc.

What is the typical on-resistance?

Maximum 18 mΩ at 22.5A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

Maximum 4.5 V at 250 µA drain current.

What is the gate charge of this MOSFET?

Maximum 25 nC at 10 V gate-source voltage.

What is the power dissipation rating?

60 W at case temperature Tc.

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