| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,303 pcs
|
1303 pcs | On Request | 1 | On Request | On Request | 1443+ | On Request | On Request |
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This P-Channel MOSFET from STMicroelectronics, part number STD3PK50Z, is suitable for various electronic applications requiring high voltage switching. It features a maximum drain-to-source voltage of 500V and a continuous drain current of 2.8A at the case temperature.
The device is designed for surface mounting, utilizing the TO-252-3, DPak (2 Leads + Tab), SC-63 package. Key electrical characteristics include a maximum on-resistance of 4 Ohm at 1.4A and 10V, a gate charge of 20 nC at 10V, and an input capacitance of 620 pF at 25V.
Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is built on MOSFET (Metal Oxide) technology. The gate threshold voltage is a maximum of 4.5V at 100µA, and the maximum gate-to-source voltage is ±30V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
It is available in a TO-252-3 (DPak) surface-mount package.
-55°C to 150°C (junction temperature).
20 nC maximum at 10V gate-source voltage.
620 pF maximum at 25V drain-source voltage.
4 Ohm maximum at 1.4A drain current and 10V gate-source voltage.
2.8A at case temperature.