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STD3NM60N STD3NM60N is an N-Channel power MOSFET from STMicroelectronics with 600V drain-source voltage and 3.3A continuous drain current.
Mfr Part #:

STD3NM60N

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
STD3NM60N is an N-Channel power MOSFET from STMicroelectronics with 600V drain-source voltage and 3.3A continuous drain current.
✓ Total Stock: 80,000 pcs
$ Price Range: $2.56

STD3NM60N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
72,500 pcs
On Request
72500 pcs On Request 1 On Request On Request 17+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
7,500 pcs
On Request
7500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

STD3NM60N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STD3NM60N Description

Short technical summary and product information.

The STD3NM60N is an N-Channel enhancement-mode power MOSFET manufactured by STMicroelectronics. It features a drain-to-source voltage rating of 600V and a continuous drain current of 3.3A at 25°C case temperature. The device offers a maximum on-resistance of 1.8 Ohm at a gate-source voltage of 10V and drain current of 1.65A.

 

This MOSFET has a maximum power dissipation of 50W at case temperature. Its gate charge is 9.5 nC maximum at 10V gate drive, and input capacitance is 188 pF maximum at 50V drain-source bias. These characteristics make it suitable for medium-voltage switching applications.

 

The device is housed in a DPAK (TO-252) surface-mount package, which provides a compact footprint for automated assembly. It is designed for use in power supply circuits, DC-DC converters, and motor control applications where high voltage and moderate current handling are required.

STD3NM60N Quick Information

Product Type: MOSFET
Canonical Name: STD3NM60N N-Channel Power MOSFET
Subcategory: Single MOSFET

STD3NM60N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD3NM60N Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD3NM60N Features

  • 600V drain-to-source voltage rating.
  • 3.3A continuous drain current at 25°C.
  • 1.8 Ohm maximum on-resistance at 10V gate drive.
  • 9.5 nC gate charge for efficient switching.
  • DPAK surface-mount package for compact designs.

STD3NM60N Applications

  • Used in AC-DC power supply circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Applicable in lighting ballast circuits.

STD3NM60N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STD3NM60N?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the STD3NM60N?

The continuous drain current is 3.3A at 25°C case temperature.

What is the on-resistance of the STD3NM60N?

The maximum on-resistance is 1.8 Ohm at a gate-source voltage of 10V and drain current of 1.65A.

What is the gate charge of the STD3NM60N?

The maximum gate charge is 9.5 nC at a gate-source voltage of 10V.

What is the input capacitance of the STD3NM60N?

The maximum input capacitance is 188 pF at a drain-source voltage of 50V.

What is the maximum power dissipation of the STD3NM60N?

The maximum power dissipation is 50W at case temperature.

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