| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
306,020 pcs
|
306020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD3NK80ZT4 is an N-Channel MOSFET with a high breakdown voltage of 800V. It is designed for applications requiring a continuous drain current of up to 2.5A (Tc).
Key electrical characteristics include a maximum on-resistance of 4.5 Ohms at 1.25A and 10V, a gate threshold voltage of 4.5V at 50µA, and a gate charge of 19nC at 10V. The input capacitance (Ciss) is rated at 485pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc). It utilizes MOSFET (Metal Oxide) technology.
The component is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 configuration, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
DPAK (TO-252-3).
-55°C to 150°C (junction).
2.5A at case temperature.
4.5 Ohms maximum at 1.25A and 10V gate drive.
19nC at 10V gate-source voltage.
485pF at 25V drain-source voltage.