| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,850 pcs
|
8850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,407 pcs
|
1407 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,155 pcs
|
1155 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD3NK80Z-1 is a high-voltage N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2.5A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 4.5 Ohms at 1.25A and 10V, a gate charge (Qg) of 19 nC at 10V, and a gate threshold voltage (Vgs(th)) of 4.5V at 50µA. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 70W (Tc).
This MOSFET is supplied in a compact TO-251 (IPAK) package, suitable for through-hole mounting. The technology used is MOSFET (Metal Oxide). Environmental compliance includes RoHS3 compliance and an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
TO-251 (IPAK) through-hole package.
-55°C to 150°C (junction temperature).
Maximum 4.5V at 50µA drain current.
Maximum 4.5 Ohms at 1.25A drain current and 10V gate drive.
70W at case temperature (Tc).