| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17,900 pcs
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17900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The STMicroelectronics STD3NK60Z is an N-Channel MOSFET belonging to the SuperMESH™ series. It is designed for applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2.4A at 25°C. The device has a maximum on-resistance (Rds On) of 3.6 Ohms at 1.2A and 10V gate-source voltage. Its maximum power dissipation is rated at 45W.
The MOSFET operates within a temperature range of -55°C to 150°C. It features a gate-source voltage threshold (Vgs(th)) of 4.5V at 50µA and a maximum gate-source voltage of ±30V. Input capacitance (Ciss) is 311 pF at 25V, and gate charge (Qg) is 11.8 nC at 10V.
Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) format, the STD3NK60Z is suitable for through-hole mounting. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the STD3NK60Z is 600V.
The continuous drain current (Id) for the STD3NK60Z is 2.4A at 25°C.
The maximum on-resistance (Rds On) for the STD3NK60Z is 3.6 Ohms at 1.2A and 10V.
The operating temperature range for the STD3NK60Z is -55°C to 150°C.
The STD3NK60Z is available in the TO-251-3 Short Leads, IPak, TO-251AA package.
The STD3NK60Z is designed for through-hole mounting.
The STD3NK60Z is RoHS3 Compliant.