| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STD3NK50Z-1 is an N-Channel SuperMESH™ MOSFET with a drain-source voltage of 500V and a maximum continuous drain current of 2.3A at 25°C case temperature. It offers a low on-resistance of 3.3 Ohms maximum at 1.15A and 10V Vgs, with a typical RDS(on) of 2.8 Ohms.
This MOSFET is designed for applications requiring high voltage capability and improved ESD protection. Key electrical characteristics include a gate threshold voltage of 4.5V maximum at 50µA and a gate charge of 15nC maximum at 10V Vgs. The device also boasts extremely high dv/dt capability and is 100% avalanche tested.
Packaged in an IPAK (TO-251-3 Short Leads) through-hole package, the STD3NK50Z-1 is suitable for various power supply applications. Its operating temperature range is -55°C to 150°C (TJ), with a maximum power dissipation of 45W at 25°C case temperature.
Applications for this MOSFET include AC adaptors, battery chargers, and switch-mode power supplies (SMPS). Its robust design and high voltage rating make it a reliable component for demanding power conversion tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 500V.
The STD3NK50Z-1 is available in a TO-251 (IPAK) through-hole package with short leads.
The operating junction temperature range is -55°C to 150°C.
The typical on-resistance is 2.8Ω, with a maximum of 3.3Ω at Vgs=10V and Id=1.15A.
The continuous drain current is 2.3A at case temperature 25°C.
The maximum gate threshold voltage is 4.5V at Id=50µA.
Yes, the device is 100% avalanche tested.