| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD3N40K3 is a single N-Channel MOSFET designed for various electronic applications requiring efficient power switching. This component boasts a high drain-to-source voltage (Vdss) of 400V and can handle a continuous current of 2A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 3.4 Ohms at 900mA and 10V, an input capacitance (Ciss) of 165pF at 50V, and a gate charge (Qg) of 11nC at 10V. The gate-to-source voltage (Vgs) maximum is ±30V, with a gate threshold voltage (Vgs(th)) of 4.5V at 50µA.
Packaged in a surface-mount DPAK (TO-252-3) package, the STD3N40K3 operates within a temperature range of -55°C to 150°C (TJ). Its robust construction and specifications make it suitable for use in power supplies, motor control, and other demanding applications where reliable switching performance is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 400V.
The continuous drain current is 2A at the case temperature.
The maximum on-resistance is 3.4Ohm at Id=900mA and Vgs=10V.
The maximum gate threshold voltage is 4.5V at Id=50µA.
The operating junction temperature range is -55°C to 150°C.
The device is available in TO-252-3 (DPAK) surface mount package.
The maximum gate charge is 11nC at Vgs=10V.