| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD3LN80K5 is a high-voltage N-Channel MOSFET housed in a Surface Mount DPAK package. It offers a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2A, making it suitable for various power switching applications.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 5V at 100µA, a maximum gate-to-source voltage (Vgs) of ±30V, and a maximum on-resistance (Rds On) of 3.25 Ohm at 1A and 10V. The input capacitance (Ciss) is 102 pF at 100V, and the gate charge (Qg) is 2.63 nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 45W (Tc). It is constructed using MOSFET (Metal Oxide) technology. The component is RoHS3 Compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 800V.
The maximum continuous drain current is 2A at case temperature.
The maximum on-resistance is 3.25Ω at 1A drain current and 10V gate drive.
The maximum gate threshold voltage is 5V at 100µA drain current.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-252-3 (DPak) surface-mount package.
The gate charge is 2.63nC at 10V.