| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,800 pcs
|
4800 pcs | On Request | 1 | On Request | On Request | 2018 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD30NF06 is an N-channel enhancement mode power MOSFET manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current rating of 28A at case temperature. The device achieves a low on-resistance of 28mOhm at a gate drive voltage of 10V and drain current of 15A.
This MOSFET has a gate charge of 58nC at Vgs=10V and an input capacitance of 1750pF at Vds=25V, making it suitable for high-frequency switching applications. The maximum power dissipation is 70W at case temperature, and the device can operate over a junction temperature range of -55°C to 175°C.
The part is housed in a surface mount DPAK package (TO-252-3), which offers a compact footprint for automated assembly. Its N-channel technology and robust electrical characteristics make it well-suited for power management, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
28A at case temperature.
28mOhm maximum at 15A drain current and 10V gate drive.
TO-252-3 (DPak) surface mount package.
-55°C to 175°C junction temperature.
58nC at Vgs=10V.
70W at case temperature.