| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,932 pcs
|
8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD2LN60K3 is a single N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 600V and a continuous current rating of 2A (Tc). This device features a surface-mount DPAK package (TO-252-3, SC-63) for efficient board integration.
Key electrical characteristics include a maximum Rds On of 4.5 Ohm at 1A and 10V Vgs, an input capacitance (Ciss) of 235 pF at 50V, and a gate charge (Qg) of 12 nC at 10V. The MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 45W (Tc).
This component is suitable for various power switching applications where high voltage and moderate current handling are required. Its surface-mount design facilitates automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
TO-252-3, DPak (2 Leads + Tab), SC-63 (DPAK supplier package)
150°C
12 nC at Vgs=10V
4.5 ohms maximum at Id=1A, Vgs=10V
235 pF at Vds=50V
4.5V maximum at Id=50µA