| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD2HNK60Z-1 is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 2A at a case temperature (Tc).
This MOSFET offers a maximum power dissipation of 45W (Tc) and has an on-resistance (Rds On) of 4.8 Ohm at 1A and 10V. Key electrical parameters include a gate charge (Qg) of 15nC at 10V and an input capacitance (Ciss) of 280pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 50µA, with a maximum gate-source voltage (Vgs) of ±30V.
Designed for through-hole mounting, the STD2HNK60Z-1 comes in a TO-251-3 Short Leads, IPak, TO-251AA package, also known as TO-251 (IPAK). It operates within a temperature range of -55°C to 150°C (TJ). The component is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current is 2A at case temperature (Tc).
The maximum on-resistance (Rds on) is 4.8 Ohm at 1A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The STD2HNK60Z-1 is available in a TO-251-3 (IPAK) through-hole package.
The maximum gate charge (Qg) is 15 nC at 10V gate-source voltage.
The maximum input capacitance (Ciss) is 280 pF at 25V drain-source voltage.