| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
376 pcs
|
376 pcs | On Request | 1 | On Request | On Request | 1910+ | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The STMicroelectronics STD2805T4 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.
This transistor offers a continuous collector current of 5A and a collector-emitter breakdown voltage of 60V. It has a power dissipation rating of 15W and a frequency response up to 150MHz. The DC current gain (hFE) is a minimum of 200 at 100mA collector current and 2V collector-emitter voltage. The saturation voltage (Vce) is a maximum of 600mV at 200mA collector current and 5A collector current.
Operating temperature ranges up to 150°C (TJ). The component is specified with RoHS3 compliance and Moisture Sensitivity Level (MSL) 1. Its surface mount capability makes it suitable for automated assembly processes in compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 60 V.
The maximum continuous collector current is 5 A.
The maximum power dissipation is 15 W.
The transition frequency is 150 MHz.
The package is TO-252-3, DPak (2 Leads + Tab), SC-63, and it is a surface mount device.
The maximum operating junction temperature is 150°C.
The minimum DC current gain (hFE) is 200 at Vce=2V, Ic=100mA.