| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD26P3LLH6 is a P-Channel MOSFET utilizing Metal Oxide technology. It is designed for surface mount applications and comes in a DPAK package. Key electrical characteristics include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C. The on-resistance (Rds On) is a maximum of 19mOhm at 33A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. The device can handle a maximum gate-source voltage (Vgs) of ±20V and has an input capacitance (Ciss) of 1450 pF at 25V. The maximum power dissipation is 40W (Tc), and it operates at temperatures between -55°C and 175°C (TJ).
This MOSFET is suitable for applications requiring efficient switching and power handling. Its surface mount DPAK package facilitates integration into compact PCB designs. The P-channel configuration makes it useful for high-side switching and load driving applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
It is available in a TO-252-3 (DPAK) surface mount package.
The maximum operating junction temperature is 175°C.
The continuous drain current is 12A at 25°C.
The maximum gate threshold voltage is 2.5V at 250µA.
The maximum on-resistance is 19 mOhm at 33A and 10V gate drive.
The maximum gate charge is 12 nC at 4.5V gate-source voltage.