| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STMicroelectronics STD20NF06T4 is an N-Channel Power MOSFET belonging to the STripFET II series. This device is engineered for high-density applications, offering low on-resistance and rugged avalanche characteristics.
Key electrical specifications include a maximum drain-source voltage of 60V and a continuous drain current of 24A at 25°C. The on-resistance is rated at a maximum of 40mOhm at 12A and 10V gate-source voltage. It also features a gate threshold voltage of 4V and a gate charge of 31nC.
This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and is designed for surface mounting.
The STD20NF06T4 is suitable for various switching applications, benefiting from its exceptional dv/dt capability and 100% avalanche tested rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V minimum.
The maximum continuous drain current is 24A at TC=25°C and 17A at TC=100°C.
The on-resistance is 40mOhm maximum at VGS=10V and ID=12A.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-252-3 (DPAK) surface mount package.
The gate threshold voltage is 4V maximum at ID=250µA.
The gate charge is 31nC maximum at VGS=10V.