| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD20NF06L from UMW (Youtai Semiconductor) is an N-Channel Enhancement Mode Power MOSFET. It utilizes advanced trench technology to achieve excellent RDS(ON) with low gate charge, making it suitable for various applications including load switching, PWM applications, and power management.
Key electrical specifications include a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 30A at 25°C case temperature. The on-state resistance (RDS(ON)) is as low as 25mΩ typical at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 55W at 25°C case temperature.
This MOSFET is available in a TO-252 (DPAK) surface mount package. The package is supplied on a 330mm reel with a tape width of 12mm, containing 2500 units per reel. Its robust design and specifications make it a reliable choice for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.