STD20N20T4 The STMicroelectronics STD20N20T4 is an N-Channel MOSFET designed for high current switching applications. It features a 200V drain-to-source voltage and 18A continuous current capability.
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STD20N20T4

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD20N20T4 is an N-Channel MOSFET designed for high current switching applications. It features a 200V drain-to-source voltage and 18A continuous current capability.
✓ Total Stock: 15 pcs
$ Price Range: $2.56

STD20N20T4 Available from 1 distributor

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STD20N20T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD20N20T4 Description

Short technical summary and product information.

The STMicroelectronics STD20N20T4 is an N-Channel MOSFET from the STripFET II series, realized with STMicroelectronics' unique STripFET process. This MOSFET is specifically designed to minimize input capacitance and gate charge, making it suitable as a primary switch in advanced high-efficiency isolated DC-DC converters and other high current switching applications.

 

Key electrical specifications include a maximum drain-to-source voltage (Vds) of 200V and a continuous drain current (Id) of 18A. The on-resistance (Rds On) is a maximum of 125mOhm at 10A and 10V, with a typical value of 0.10 Ohm. The gate threshold voltage (Vgs(th)) is 4V at 250µA, and the maximum gate-to-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is 940pF at 25V, and gate charge (Qg) is 39nC at 10V.

 

This device offers exceptional dv/dt capability and is 100% avalanche tested. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. The maximum power dissipation is 90W at Tc. The STD20N20T4 is suitable for high efficiency DC-DC converters and primary side switch applications.

STD20N20T4 Quick Information

Product Type: MOSFET
Series: STripFET II
Canonical Name: STMicroelectronics STD20N20T4 N-Channel MOSFET
Subcategory: N-Channel

STD20N20T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD20N20T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD20N20T4 Features

  • 200V drain-to-source voltage capability.
  • 18A continuous drain current rating.
  • Low gate charge for efficient switching.
  • Surface mount DPAK package.
  • Suitable for high efficiency converters.

STD20N20T4 Applications

  • Used in power supply switching circuits.
  • Ideal for DC-DC converter applications.
  • Suitable for motor control and inverters.
  • Applied in automotive and industrial systems.

STD20N20T4 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STD20N20T4?

200V maximum.

What is the continuous drain current rating?

18A maximum.

What is the on-resistance of this MOSFET?

Maximum 125mOhm at 10A, 10V; typical 0.10 ohms.

What is the gate threshold voltage?

Maximum 4V at 250µA.

What package is the STD20N20T4 available in?

TO-252-3, DPAK (surface mount).

What is the gate charge?

39nC maximum at 10V.

What is the input capacitance?

940pF maximum at 25V.

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