| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
885 pcs
|
885 pcs | On Request | 1 | On Request | On Request | 1415+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD1NK80Z-1 is an N-Channel MOSFET with a high breakdown voltage of 800V. It is designed for applications requiring a continuous drain current of up to 1A and can dissipate up to 45W of power.
Key electrical characteristics include a maximum on-resistance of 16 Ohms at 500mA and 10V, a gate charge of 7.7 nC, and an input capacitance of 160 pF. The gate threshold voltage is 4.5V at 50µA, and the maximum gate-source voltage is ±30V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a TO-251 (IPAK) configuration with short leads, suitable for through-hole mounting.
The STD1NK80Z-1 is built using MOSFET (Metal Oxide) technology. It is compliant with RoHS3 standards, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
1A at case temperature.
45W at case temperature.
16 Ohms maximum at 500mA drain current and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-251-3 short leads (IPAK, TO-251AA) through-hole.
Maximum 4.5V at 50µA drain current.