STD1NK60T4 The STMicroelectronics STD1NK60T4 is an N-Channel MOSFET designed for 600V applications. It features a 1A continuous drain current and is available in a surface mount DPAK package.
Mfr Part #:

STD1NK60T4

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD1NK60T4 is an N-Channel MOSFET designed for 600V applications. It features a 1A continuous drain current and is available in a surface mount DPAK package.
✓ Total Stock: 228,118 pcs
$ Price Range: $2.56

STD1NK60T4 Available from 3 distributors

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165,000 pcs
165000 pcs On Request 1 On Request On Request On Request On Request On Request
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61,020 pcs
61020 pcs On Request 1 On Request On Request On Request On Request On Request
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2,098 pcs
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STD1NK60T4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD1NK60T4 Description

Short technical summary and product information.

The STMicroelectronics STD1NK60T4 is an N-Channel MOSFET belonging to the SuperMESH™ series. It is designed to handle a Drain to Source Voltage (Vdss) of 600V and a continuous drain current of 1A at 25°C. The MOSFET exhibits a maximum on-resistance of 8.5 Ohms at 500mA and 10V gate-source voltage, with a gate threshold voltage of 3.7V at 250µA.

 

Key electrical characteristics include an input capacitance (Ciss) of 156 pF at 25V and a gate charge (Qg) of 10 nC at 10V. The maximum gate-source voltage is ±30V. The device has a maximum power dissipation of 30W (Tc) and operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. It is supplied in tape and reel packaging. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

STD1NK60T4 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STMicroelectronics STD1NK60T4 N-Channel MOSFET
Subcategory: N-Channel

STD1NK60T4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD1NK60T4 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD1NK60T4 Features

  • 600V drain-source voltage rating.
  • 1A continuous drain current capability.
  • 8.5 Ohm maximum on-resistance.
  • Surface mount DPAK package.
  • N-Channel MOSFET technology.

STD1NK60T4 Applications

  • Suitable for power switching circuits.
  • Used in general purpose electronics.
  • Ideal for voltage regulation tasks.
  • Applicable in power supply designs.

STD1NK60T4 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the STD1NK60T4?

The drain-to-source voltage (Vdss) for the STD1NK60T4 is 600V.

What is the continuous drain current of the STD1NK60T4?

The continuous drain current (Id) at 25°C is 1A (Tc).

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 8.5 Ohms at 500mA drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STD1NK60T4 supplied in?

The STD1NK60T4 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

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