STD1NK60-1 The STMicroelectronics STD1NK60-1 is an N-Channel MOSFET with a 600V drain-source voltage and 1A continuous drain current. It is supplied in an IPAK package.
Mfr Part #:

STD1NK60-1

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD1NK60-1 is an N-Channel MOSFET with a 600V drain-source voltage and 1A continuous drain current. It is supplied in an IPAK package.
✓ Total Stock: 4,945 pcs
$ Price Range: $2.56

STD1NK60-1 Available from 3 distributors

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2,775 pcs
2775 pcs On Request 1 On Request On Request On Request On Request On Request
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1,170 pcs
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STD1NK60-1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD1NK60-1 Description

Short technical summary and product information.

The STMicroelectronics STD1NK60-1 is a high-performance N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 8.5 Ohms at 500mA and 10V, a gate threshold voltage (Vgs(th)) of 3.7V at 250µA, and a gate charge (Qg) of 10 nC at 10V. The device can withstand a maximum gate-source voltage (Vgs) of ±30V and has an input capacitance (Ciss) of 156 pF at 25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 30W (Tc). It is mounted using a through-hole method and comes in a TO-251-3 short leads, IPak, or TO-251AA package.

 

The STD1NK60-1 is RoHS3 compliant and has a REACH status of unaffected. Its robust design and specifications make it suitable for various power switching and control applications.

STD1NK60-1 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: STD1NK60-1 N-Channel MOSFET
Subcategory: N-Channel

STD1NK60-1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD1NK60-1 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD1NK60-1 Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • 1A continuous drain current at 25°C.
  • Maximum on-resistance of 8.5 Ohms.
  • TO-251-3 (IPAK) through-hole package.
  • Operates from -55°C to 150°C.

STD1NK60-1 Applications

  • Power supply switching applications.
  • Motor control circuits.
  • General purpose power switching.
  • DC-DC converters.

STD1NK60-1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the STD1NK60-1?

600V.

What is the package type of the STD1NK60-1?

TO-251-3 Short Leads (IPak, TO-251AA).

What is the operating temperature range of the STD1NK60-1?

-55°C to 150°C (junction temperature).

What is the continuous drain current rating at 25°C?

1A.

What is the maximum on-resistance at 500mA and 10V?

8.5 Ohms.

What is the gate threshold voltage?

3.7V maximum at 250µA.

What is the maximum gate charge?

10 nC at 10V.

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