| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The STMicroelectronics STD1NB80-1 is an N-Channel Power MOSFET designed for power switching applications. This component boasts a high Drain-Source Voltage rating of 800V, making it suitable for demanding electrical environments.
The MOSFET utilizes a new patent-pending strip layout and proprietary edge termination structure. This design contributes to low RDS(on) per area, exceptional avalanche and dv/dt capabilities, and unrivalled gate charge and switching characteristics.
While specific package details and mounting type are not detailed here, this MOSFET is part of the broader category of discrete semiconductor products, specifically single FETs and MOSFETs. Its high voltage rating suggests applications in power supplies, motor control, and other high-power conversion systems where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage for the STD1NB80-1 is 800V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.