| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,751 pcs
|
7751 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD19N3LLH6AG is a high-performance N-Channel MOSFET designed for various power switching applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 10A at Tc. The on-resistance (Rds On) is specified at a maximum of 33mOhm when measured at 5A drain current and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and has a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The input capacitance (Ciss) is 321pF at 25V, and the gate charge (Qg) is 3.7nC at 4.5V. The operating temperature range is from -55°C to 175°C (TJ), with a maximum power dissipation of 30W (Tc).
The STD19N3LLH6AG is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 case, designed for surface mounting. It is suitable for applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
10 A at case temperature.
33 mOhm at 5A with 10V gate drive.
2.5 V maximum at 250 µA.
-55°C to 175°C (junction).
30 W at case temperature.
TO-252-3, DPak (2 Leads + Tab), SC-63, with DPAK supplier package.