| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,360 pcs
|
1360 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD18N65M5 is an N-Channel MOSFET designed for power applications. It offers a high drain-source voltage (Vdss) of 650V and can handle a continuous drain current of 15A (Tc).
Key electrical characteristics include a maximum on-state resistance (Rds On) of 220mOhm at 7.5A and 10V gate-source voltage. The gate charge (Qg) is 31nC maximum at 10V, and input capacitance (Ciss) is 1240pF maximum at 100V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 110W (Tc). It is constructed using MOSFET (Metal Oxide) technology.
The STD18N65M5 is available in a Surface Mount package, specifically the TO-252-3, DPak (2 Leads + Tab), SC-63 configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-252-3 (DPAK) surface mount package.
150°C.
15A at case temperature.
220mOhm maximum at 7.5A and 10V gate drive.
31nC at 10V gate-source voltage.
Surface mount.