| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD18N60M6 is a robust N-Channel MOSFET suitable for various power electronics applications. It boasts a high drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current of 13A at the case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 280mOhm at 6.5A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4.75V at 250µA. The MOSFET also has an input capacitance (Ciss) of 650pF and a gate charge (Qg) of 16.8nC.
This device is housed in a Surface Mount D-PAK (TO-252) package, facilitating easy integration into printed circuit boards. It operates within a wide temperature range of -55°C to 150°C (TJ), making it suitable for demanding environments. The technology employed is MOSFET (Metal Oxide), offering efficient switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
It is available in a surface-mount DPAK (TO-252) package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 280mOhm at 6.5A and 10V gate drive.
The maximum gate charge is 16.8nC at 10V gate-source voltage.
The maximum input capacitance is 650pF at 100V drain-source voltage.
The maximum power dissipation is 110W at case temperature.