| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
58,520 pcs
|
58520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,377 pcs
|
1377 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD18N55M5 is a single N-Channel MOSFET with a maximum drain-to-source voltage (Vdss) of 550V and a continuous current rating of 16A. It offers a low on-resistance of 192mOhm at a gate-source voltage of 10V and a drain current of 8A.
This MOSFET is constructed using Metal Oxide Semiconductor technology and is housed in a surface-mount DPAK package (TO-252-3, SC-63). It operates at temperatures up to 150°C and has a maximum power dissipation of 110W.
Key electrical characteristics include an input capacitance (Ciss) of 1260pF at 100V and a gate charge (Qg) of 31nC at 10V. The gate threshold voltage (Vgs(th)) is 5V at 250µA, with a maximum gate-source voltage of ±25V.
This component is suitable for various power electronics applications requiring high voltage and current handling capabilities in a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
550V.
16A.
TO-252-3 (DPAK) surface mount.
150°C.
192mOhm at 8A, 10V.
31nC at 10V.
1260pF at 100V.