| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
401,778 pcs
|
401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD16NF06LT4 is an N-Channel Power MOSFET from the STripFET II series, designed for high-efficiency switching applications. This device offers a typical Rds(on) of 0.060 Ω at a gate-source voltage of 10V and a drain current of 8A, with a maximum drain-source voltage of 60V.
It is available in two package types: the surface-mount DPAK (TO-252) and the through-hole IPAK (TO-251). The DPAK version is supplied on tape and reel, while the IPAK version comes in a tube.
Key electrical characteristics include a continuous drain current of 24A at 25°C case temperature and 17A at 100°C. The device also features a gate threshold voltage of 1V and a low input capacitance. Its rugged avalanche characteristics and high packing density contribute to its reliability in demanding applications.