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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STD16N65M2 is a high-performance N-Channel MOSFET transistor designed for various power applications. It boasts a significant drain-source voltage rating of 650V and can handle a continuous drain current of 11A, with a power dissipation capability of 110W.
This unipolar transistor utilizes an enhancement mode channel and is housed in a DPAK (TO252) surface-mount package, making it suitable for compact designs. Key electrical characteristics include an on-state resistance of 0.32Ω and a gate charge of 19.5nC.
The STD16N65M2 is a robust component for power switching and control circuits where high voltage and current handling are required. Its SMD mounting facilitates automated assembly processes.