STD16N50M2 The STMicroelectronics STD16N50M2 is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source voltage and a continuous drain current of 13A.
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STD16N50M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD16N50M2 is an N-Channel MOSFET designed for power applications. It offers a 500V drain-source voltage and a continuous drain current of 13A.
✓ Total Stock: 57,500 pcs
$ Price Range: $2.56

STD16N50M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
55,000 pcs
55000 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

STD16N50M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD16N50M2 Description

Short technical summary and product information.

The STMicroelectronics STD16N50M2 is a single N-Channel MOSFET with a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Tc) of 13A. It features a low on-resistance (Rds On) of 280mOhm at 6.5A and 10V gate drive voltage. The device has a maximum power dissipation of 110W (Tc) and operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET utilizes Metal Oxide technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. Key electrical characteristics include an input capacitance (Ciss) of 710pF at 100V and a gate charge (Qg) of 19.5nC at 10V. The maximum gate-source voltage is ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA.

 

Designed for various power switching applications, the STD16N50M2 is suitable for use where high voltage and current handling are required. Its surface mount package facilitates integration into compact electronic designs.

STD16N50M2 Quick Information

Product Type: MOSFET
Series: MDmesh M2
Canonical Name: STD16N50M2 N-Channel MOSFET
Subcategory: Single

STD16N50M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD16N50M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD16N50M2 Features

  • 500V drain-to-source voltage rating.
  • 13A continuous drain current.
  • 280mOhm maximum on-resistance.
  • Surface mount TO-252 package.
  • N-Channel MOSFET technology.

STD16N50M2 Applications

  • Used in AC-DC power supplies.
  • Ideal for high-voltage DC-DC converters.
  • Suitable for motor control circuits.
  • Power switching in industrial applications.

STD16N50M2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STD16N50M2?

500V.

What is the continuous drain current rating?

13A at Tc (case temperature).

What is the maximum power dissipation?

110W at Tc.

What is the on-resistance of the STD16N50M2?

280mOhm maximum at 6.5A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the STD16N50M2 available in?

TO-252-3 (DPak) surface-mount package.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

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