| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STD15N65M5 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for power switching applications, featuring a high drain-source voltage rating of 650V and a continuous drain current of 11A (Tc).
Key electrical characteristics include a maximum on-resistance of 340mOhm at 5.5A and 10V Vgs, and a gate threshold voltage of 5V at 250µA. The input capacitance (Ciss) is rated at a maximum of 816pF at 100V, and the gate charge (Qg) is a maximum of 22nC at 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 85W (Tc). It is housed in a surface-mount DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) package, making it suitable for compact designs.
The device is specified with a maximum gate-to-source voltage of ±25V and requires a drive voltage of 10V for maximum Rds On. It is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650 V.
11 A at case temperature.
340 mOhm maximum at 5.5 A and 10 V drive.
Maximum junction temperature is 150°C.
Surface mount DPAK (TO-252-3) package.
22 nC at 10 V gate voltage.