| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STD15N60M2-EP is a high-voltage N-channel Power MOSFET from STMicroelectronics. It is rated for a drain-source voltage of 600V (650V at maximum junction temperature) and a continuous drain current of 11A at 25°C case temperature. The device offers a maximum on-resistance of 378mΩ at 10V gate drive, with a typical value of 340mΩ. Gate charge is specified at 17nC, enabling efficient switching in high-frequency applications. Input capacitance is 590pF at 100V drain-source voltage. The MOSFET is avalanche rated with a single-pulse avalanche energy of 125mJ and repetitive avalanche current capability of 2.8A. Operating junction temperature range is -55°C to 150°C, with storage temperature also from -55°C to 150°C. The device is assembled in a DPAK (TO-252) surface-mount package, suitable for automated assembly. It is designed for use in power supplies, adapters, lighting, and motor control circuits where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage is 600V (650V at maximum junction temperature).
The continuous drain current is 11A at case temperature 25°C.
The maximum on-resistance is 378mΩ at 5.5A and 10V gate-source voltage.
The maximum gate charge is 17nC at 10V gate-source voltage.
Yes, the single-pulse avalanche energy is 125mJ at starting Tj=25°C.